EXCHANGE BIAS UTILIZATION-TYPE MAGNETIZATION REVERSAL ELEMENT, EXCHANGE BIAS UTILIZATION-TYPE MAGNETORESISTANCE EFFECT ELEMENT, EXCHANGE BIAS UTILIZATION-TYPE MAGNETIC MEMORY, NONVOLATILE LOGIC CIRCUIT AND MAGNETIC NEURON ELEMENT

摘要

This exchange bias utilization-type magnetization reversal element is provided with: antiferromagnetic driving layer antiferromagnetism (1) comprising first region (1a) and second region antiferromagnetism (1b), and third region antiferromagnetism (1c) located therebetween; magnetic coupling layer antiferromagnetism (2) magnetically coupled to the antiferromagnetic driving layer antiferromagnetism (1) in the third region antiferromagnetism (1c); first electrode layer antiferromagnetism (5) joined to the first region antiferromagnetism (1a); and a second electrode layer (6) joined to the second region antiferromagnetism (1b).