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Method of selectively etching first region made of silicon nitride against second region made of silicon oxide
Method of selectively etching first region made of silicon nitride against second region made of silicon oxide
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机译:相对于由氧化硅制成的第二区域选择性地蚀刻由氮化硅制成的第一区域的方法
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摘要
Generation of a deposit can be suppressed and high selectivity can be acquired when etching a first region made of silicon nitride selectively against a second region made of silicon oxide. A method includes preparing a processing target object having the first region and the second region within a chamber provided in a chamber main body of a plasma processing apparatus; generating plasma of a first gas including a gas containing hydrogen within the chamber to form a modified region by modifying a part of the first region with active species of the hydrogen; and generating plasma of a second gas including a gas containing fluorine within the chamber to remove the modified region with active species of the fluorine.
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