首页> 外文OA文献 >Alternative chemistries for etching of silicon dioxide and silicon nitride

【2h】

Alternative chemistries for etching of silicon dioxide and silicon nitride

机译：用于蚀刻二氧化硅和氮化硅的替代化学品

页面导航

摘要
著录项
相似文献
相关主题

摘要

by Simon Martin Karecki.

机译：西蒙·马丁·卡里奇（Simon Martin Karecki）

著录项

作者
Karecki Simon Martin;
展开▼
作者单位

展开▼
年度 1997
总页数
原文格式 PDF
正文语种 eng
中图分类

相似文献

外文文献
中文文献
专利

1. Unraveling the selective etching mechanism of silicon nitride over silicon dioxide by phosphoric acid: First-principles study [J] . Park Soyong, Jung Hyunwook, Min Kyung-Ah, Applied Surface Science . 2021,第Juna15期

机译：通过磷酸解开氮化硅在二氧化硅上的选择性蚀刻机理：第一原理研究
2. Eliminating dependence of hole depth on aspect ratio by forming ammonium bromide during plasma etching of deep holes in silicon nitride and silicon dioxide [J] . Iwase Taku, Yokogawa Kenetsu, Mori Masahito Japanese journal of applied physics . 2018,第6S2期

机译：通过在氮化硅和二氧化硅的深孔进行等离子刻蚀过程中形成溴化铵，消除了孔深对长宽比的依赖性
3. Direct patterned etching of silicon dioxide and silicon nitride dielectric layers by inkjet printing [J] . Lennon AJ, Ho-Baillie AWY, Wenham SR Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2009,第10期

机译：通过喷墨印刷对二氧化硅和氮化硅介电层进行直接图案刻蚀
4. Oxide Surface Roughness During Stepwise Wet Etching of Fowler-Nordheim Stressed Silicon Dioxide FilmsOxide Surface Roughness During Stepwise Wet Etching of Fowler-Nordheim Stressed Silicon Dioxide Films [C] . Kikuo Yamabe The Meeting of the Electrochemical Society . 2000

机译：在Fowler-nordheim的逐步湿法蚀刻期间氧化物表面粗糙度在彼得·诺德海姆的逐步湿法蚀刻型二氧化硅薄膜期间循环湿法施用氮二氧化硅膜表面粗糙度
5. The role of plasma-surface interactions in process chemistry: Mechanistic studies of a-carbon nitride deposition and sulfur fluoride/oxygen etching of silicon. [D] . Stillahn, Joshua M. 2010

机译：等离子体-表面相互作用在过程化学中的作用：α-碳氮化物沉积和硅的氟化硫/氧蚀刻的机理研究。
6. Engineering Silicon to Porous Silicon and SiliconNanowires by Metal-Assisted Chemical Etching: Role of Ag Size andElectron-Scavenging Rate on Morphology Control and Mechanism [O] . Kanakaraj Rajkumar, Ramanathaswamy Pandian, Amirthapandian Sankarakumar, 2017

机译：从硅工程到多孔硅和硅金属辅助化学刻蚀的纳米线：Ag的大小和作用电子清除率对形貌控制及机理的影响
7. HIGH-QUALITY SURFACE PASSIVATION OBTAINED BY HIGH-RATE DEPOSITED SILICON NITRIDE, SILICON DIOXIDE AND AMORPHOUS SILICON USING THE VERSATILE EXPANDING THERMAL PLASMA TECHNIQUE [O] . 2016

机译：利用多功能扩展热等离子体技术获得高质量沉积的氮化硅，二氧化硅和非晶硅获得的高质量表面钝化

Alternative chemistries for etching of silicon dioxide and silicon nitride

摘要

著录项

相似文献

相关主题

期刊订阅