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Memory array and measuring and testing methods for inter-hamming differences of memory array
Memory array and measuring and testing methods for inter-hamming differences of memory array
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机译:存储器阵列以及存储器阵列的汉明差异的测量和测试方法
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摘要
A memory device is provided. The memory device includes a memory array including a plurality of sections, and an inter-hamming difference analyzer. Each section includes a plurality of bits, and the numbers of the bits of the plurality of sections are the same. The inter-hamming difference analyzer is configured to obtain contents of the plurality of sections operating in different operating conditions, to obtain a plurality of inter-hamming differences of the contents, and to provide a maximum inter-hamming difference and a minimum inter-hamming difference among the inter-hamming differences of the plurality of sections. The inter-hamming difference represents the number of unlike bits between the content of one section corresponding to a first operating condition and the content of another section corresponding to a second operating condition that is different from the first operating condition.
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