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Bottom source NMOS triggered Zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS)
Bottom source NMOS triggered Zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS)
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机译:底部源NMOS触发的齐纳钳位,用于配置超低压瞬态电压抑制器(TVS)
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摘要
A low voltage transient voltage suppressing (TVS) device supported on a semiconductor substrate supporting an epitaxial layer to form a bottom-source metal oxide semiconductor field effect transistor (BS-MOSFET) that comprises a trench gate surrounded by a drain region encompassed in a body region disposed near a top surface of the semiconductor substrate. The drain region interfaces with the body region constituting a junction diode. The drain region on top of the epitaxial layer constituting a bipolar transistor with a top electrode disposed on the top surface of the semiconductor functioning as a drain/collector terminal and a bottom electrode disposed on a bottom surface of the semiconductor substrate functioning as a source/emitter electrode. The body regions further comprises a surface body contact region electrically connected to a body-to-source short-connection thus connecting the body region to the bottom electrode functioning as the source/emitter terminal.
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