An integrated circuit is provided that includes memory elements that exhibit immunity to soft error upset (SEU) events when subjected to high-energy atomic particle strikes. Each memory element may include at least two inverting circuits coupled in a feedback loop. Transistors in the memory element may be grouped in one contiguous region or divided into multiple separate regions. The memory element may include a long gate conductor that extends outside the boundary of the one contiguous region or the multiple separated regions. The long gate conductor may serve to provide parasitic resistance in the feedback loop to help mitigate SEU disturbances.
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