Reference-free multi-level sensing circuit for computing-in-memory applications, reference-free memory unit for computing-in-memory applications and sensing method thereof

摘要

A reference-free multi-level sensing circuit for computing-in-memory applications is controlled by a first bit line and a second bit line. An encoding unit generates a first register output value and a plurality of encoded values. The first register output value feedback controls a precharging unit so as to enable the precharging unit to precharge one of the first bit line and the second bit line according to the first register output value. A voltage level of the one of the first bit line and the second bit line is lower than a voltage level of the other one of the first bit line and the second bit line. The encoded values and the first register output value are formed a multi-bit signal to estimate voltage levels of the first bit line and the second bit line.