首页>
外国专利>
PN junction-based electrical fuse using reverse-bias breakdown to induce an open conduction state
PN junction-based electrical fuse using reverse-bias breakdown to induce an open conduction state
展开▼
机译:基于PN结的电熔丝,使用反向偏置击穿来诱导开路传导状态
展开▼
页面导航
摘要
著录项
相似文献
摘要
A fuse device is formed by a PN junction semiconducting region that is electrically insulated from other portions of an integrated circuit. The fuse device includes a first semiconducting zone having P type of conductivity and a second semiconducting zone having N type of conductivity in contact at a PN junction. First and second electrically conducting contact zones are provided on the first and second semiconducting zone, respectively, without making contact with the PN junction. One of the first and second semiconducting zones is configured with a non-homogeneous concentration of dopants, where a region with a lower value of concentration of dopant is located at the PN junction and a region with a higher value of concentration of dopant is locates at the corresponding electrically conducting contact zone.
展开▼