SILICON-CONTAINING FILM ETCHING METHOD, COMPUTER-READABLE STORAGE MEDIUM, AND SILICON-CONTAINING FILM ETCHING APPARATUS

摘要

There is provided a method of etching a silicon-containing film formed on a substrate, comprising: supplying an etching gas including a fluorine-containing gas having a smaller molecular weight than ClF₃ to the silicon-containing film; and controlling etching amounts at a central portion and an outer peripheral portion of the silicon-containing film by controlling a flow velocity of the etching gas.