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MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIERS HAVING LOW SWITCHING CURRENT AND HIGH DATA RETENTION
MAGNETIC EXCHANGE COUPLED MTJ FREE LAYER WITH DOUBLE TUNNEL BARRIERS HAVING LOW SWITCHING CURRENT AND HIGH DATA RETENTION
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机译:具有低开关电流和高数据保持率的双隧道障碍的磁交换耦合MTJ自由层
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摘要
Embodiments of the invention are directed to a magnetic tunnel junction (MTJ) storage element that includes a reference layer, a tunnel barrier and a free layer on an opposite side of the tunnel barrier layer from the reference layer. The reference layer has a fixed magnetization direction. The free layer includes a first region, a second region and a third region. The third region is formed from a third material that is configured to magnetically couple the first region and the second region. The first region is formed from a first material having a first predetermined magnetic moment, and the second region is formed from a second material having a second predetermined magnetic moment. The first predetermined magnetic moment is lower that the second predetermined magnetic moment.
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