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MSM ULTRAVIOLET RAY RECEIVING ELEMENT, MSM ULTRAVIOLET RAY RECEIVING DEVICE
MSM ULTRAVIOLET RAY RECEIVING ELEMENT, MSM ULTRAVIOLET RAY RECEIVING DEVICE
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机译：MSM紫外线接收元件，MSM紫外线接收设备
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摘要
An MSM ultraviolet ray receiving element has a low dark state current value and a good photosensitivity. The MSM ultraviolet ray receiving element has a first nitride semiconductor layer on a substrate, a second nitride semiconductor layer on the first nitride semiconductor layer, and first and second electrodes on the second nitride semiconductor layer. The first nitride semiconductor layer contains AlXGa(1-X)N (0.4≤X≤0.90). The second nitride semiconductor layer contains AlYGa(1-Y)N with a film thickness t (nm) satisfying 5≤t≤25. The first electrode and the second electrode contain a material containing at least three elements of Ti, Al, Au, Ni, V, Mo, Hf, Ta, W, Nb, Zn, Ag, Cr, and Zr. Al composition ratios X and Y and a film thickness t satisfy −0.009×t+X+0.22−0.03≤Y≤−0.009×t+X+0.22+0.03.
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机译：MSM紫外线接收元件具有低的暗态电流值和良好的光敏性。 MSM紫外线接收元件具有在基板上的第一氮化物半导体层，在第一氮化物半导体层上的第二氮化物半导体层以及在第二氮化物半导体层上的第一和第二电极。第一氮化物半导体层包含Al X Ga （1-X） N（0.4≤X≤0.90）。第二氮化物半导体层包含膜厚t（nm）满足5≤t≤25的Al Y Ga （1-Y） N。第一电极和第二电极包含至少包含Ti，Al，Au，Ni，V，Mo，Hf，Ta，W，Nb，Zn，Ag，Cr和Zr中的三种元素的材料。 Al组成比X和Y以及膜厚度t满足-0.009×t + X +0.22-0.03≤Y≤-0.009×t + X + 0.22 + 0.03。
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