METAL OXYNITRIDE THIN FILM, PROCESS FOR PRODUCING METAL OXYNITRIDE THIN FILM, AND CAPACITOR ELEMENT

摘要

A metal oxynitride thin film having a perovskite structure, in which the metal oxynitride thin film has a composition represented by a compositional formula A_1+αBO_x+αN_y wherein α is larger than zero and 0.300 or less, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less, an AO structure having a layered structure parallel to a plane perpendicular to a c-axis of the perovskite structure and having a composition represented by a general formula AO, and the AO structure is bonded with the perovskite structure and incorporated in the perovskite structure.