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METHODS OF SHIELDING AN EMBEDDED MRAM ARRAY ON AN INTEGRATED CIRCUIT PRODUCT COMPRISING CMOS BASED TRANSISTORS

机译:在包含CMOS晶体管的集成电路产品上屏蔽嵌入式RAM阵列的方法

摘要

One illustrative method disclosed herein includes forming an MRAM memory array and a plurality of peripheral circuits for an integrated circuit product above a semiconductor substrate, forming a patterned layer of a metal-containing shielding material above the substrate, the patterned layer of metal-containing shielding material covering the MRAM memory array while leaving an area above the plurality of peripheral circuits exposed, and, with the patterned layer of metal-containing shielding material in position, performing a silicon dangling bond passivation anneal process on the integrated circuit product.
机译:本文公开的一种说明性方法包括在半导体衬底上方形成用于集成电路产品的MRAM存储器阵列和多个外围电路,在衬底上方形成含金属屏蔽材料的图案化层,该含金属屏蔽物的图案化层覆盖MRAM存储器阵列的材料同时暴露出多个外围电路上方的区域,并且使含金属的屏蔽材料的图案化层处于适当的位置,从而对集成电路产品执行硅悬空键钝化退火工艺。

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