首页>
外国专利>
Reducing hot electron injection type of read disturb in 3D memory device during signal switching transients
Reducing hot electron injection type of read disturb in 3D memory device during signal switching transients
展开▼
机译:减少信号切换瞬态期间3D存储设备中的热电子注入类型的读取干扰
展开▼
页面导航
摘要
著录项
相似文献
摘要
A memory device and associated techniques for reducing read disturb of memory cells during a sensing process. Select gate transistors are transitioned to a conductive state one or more time during a sensing process, at the drain and/or source ends of the memory strings in an unselected sub-block. The transitioning can occur periodically, multiple times during the sensing process. When the select gate transistors are in a conductive state, accumulated holes in the channel can be removed. This help provide a faster decrease of the channel potential when the unselected word line voltages are ramped down at the end of the sensing process. The duration of a disturb-inducing channel gradient which is created next to the edge data memory cell is reduced so that read disturb of this cell is also reduced.
展开▼