Cobalt top layer advanced metallization for interconnects

摘要

An advanced metal conductor structure is described. An integrated circuit device including a substrate having a patterned dielectric layer. The pattern includes a set of features in the dielectric for a set of metal conductor structures. An adhesion promoting layer is disposed over the set of features in the patterned dielectric. A metal layer fills a first portion of the set of features and is disposed over the adhesion promoting layer. A ruthenium layer is disposed over the metal layer. A cobalt layer is disposed over the ruthenium layer fills a second portion of the set of features. The cobalt layer is formed using a physical vapor deposition process.