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High Performance SiGe Heterojunction Bipolar Transistors Built On Thin Film Silicon-On-Insulator Substrates For Radio Frequency Applications
High Performance SiGe Heterojunction Bipolar Transistors Built On Thin Film Silicon-On-Insulator Substrates For Radio Frequency Applications
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机译:高性能SiGe异质结双极晶体管,构建在薄膜硅绝缘体基板上,用于射频应用
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摘要
A silicon-on-insulator (SOI) CMOS transistor and a SOI heterojunction bipolar transistor (HBT) are fabricated on the same semiconductor substrate. First and second SOI regions are formed over the semiconductor substrate. A SOI CMOS transistor is fabricated in the first SOI region, and a collector region of the SOI HBT is fabricated in the second SOI region. The collector region can be formed by performing a first implant to a local collector region in the second SOI region, and performing a second implant to an extrinsic collector region in the second SOI region, wherein the extrinsic collector region is separated from the local collector region. A SiGe base is formed over the collector region, wherein a dielectric structure separates portions of the SiGe region and the extrinsic collector region. The SOI CMOS transistor and SOI HBT may be used to implement a front end module of an RF system.
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机译:在同一半导体衬底上制造绝缘体上硅(SOI)CMOS晶体管和SOI异质结双极晶体管(HBT)。在半导体衬底上方形成第一SOI区域和第二SOI区域。在第一SOI区域中制造SOI CMOS晶体管,并且在第二SOI区域中制造SOI HBT的集电极区域。可以通过对第二SOI区域中的局部集电极区域执行第一注入,并且对第二SOI区域中的非本征集电极区域执行第二注入来形成集电极区域,其中,非本征集电极区域与局部集电极区域分离。 。在集电极区上方形成SiGe基极,其中介电结构将SiGe区和非本征集电极区的部分分开。 SOI CMOS晶体管和SOI HBT可以用于实现RF系统的前端模块。
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