首页> 外国专利> CROSS POINT ARRAY MEMORY IN A NON-VOLATILE DUAL IN-LINE MEMORY MODULE

CROSS POINT ARRAY MEMORY IN A NON-VOLATILE DUAL IN-LINE MEMORY MODULE

机译:非挥发性双列直插式内存模块中的交叉点数组内存

摘要

An indication of a power loss can be received at a cross point array memory dual in-line memory module (DIMM) operation component of a memory sub-system. The cross point array memory DIMM operation component includes a volatile memory component and a non-volatile cross point array memory component. In response to receiving the indication of the power loss, a type of write operation for the non-volatile cross point array memory component of the cross point array memory DIMM operation component is determined based on a characteristic of the memory sub-system. Data stored at the volatile memory component of the cross point array memory DIMM operation component is retrieved and written to the non-volatile cross point array memory component of the cross point array memory DIMM operation component by using the determined type of write operation.
机译:可以在存储器子系统的交叉点阵列存储器双列直插式存储器模块(DIMM)操作组件处接收到功率损耗的指示。交叉点阵列存储器DIMM操作组件包括易失性存储器组件和非易失性交叉点阵列存储器组件。响应于接收到功率损耗的指示,基于存储子系统的特性来确定针对交叉点阵列存储器DIMM操作组件的非易失性交叉点阵列存储组件的写操作的类型。通过使用确定的写入操作类型,检索存储在交叉点阵列存储器DIMM操作组件的易失性存储器组件中的数据并将其写入交叉点阵列存储器DIMM操作组件的非易失性交叉点阵列存储器组件。

著录项

  • 公开/公告号US2019333548A1

    专利类型

  • 公开/公告日2019-10-31

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201816226626

  • 申请日2018-12-19

  • 分类号G11C5/14;G11C13;G11C11/4074;G06F3/06;

  • 国家 US

  • 入库时间 2022-08-21 12:09:21

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号