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Giant Perpendicular Magnetic Anisotropy In Fe/GaN Thin Films For Data Storage And Memory Devices
Giant Perpendicular Magnetic Anisotropy In Fe/GaN Thin Films For Data Storage And Memory Devices
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机译:Fe / GaN薄膜中用于数据存储和存储设备的巨大垂直磁各向异性
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摘要
A giant perpendicular magnetic anisotropy (PMA) material comprises a III-V nitride substrate, and a layer of nitrogen disposed upon a surface of the III-V nitride substrate. The layer of nitrogen forms an N-terminated surface. The PMA material further comprises an iron film disposed upon the N-terminated surface. The III-V nitride substrate may be gallium nitride (GaN). A memory device using the PMA material may further comprise an input/output interface configured to communicate an address signal, a read/write signal and a data signal. The memory device may further comprise a controller configured to coordinate reading data from and writing data to the memory element.
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