Crystallization behavior of Ni_(54)Mn_(25.1)Ga_(20.9) ferromagnetic shape memory thin film

摘要

Ni_(54)Mn_(25.1)Ga_(20.9) ferromagnetic shape memory thin film was deposited onto Al foil using r.f.magnetron sputtering technique.The crystallization behavior of the film was investigated by XRD and DSC.The activation energy of crystallization of the film was calculated by Kissinger's method.The results show that the crystallization temperature of Ni_(54)Mn_(25.1)Ga_(20.9) free-standing thin film in martensite state is 372 ℃,and the activation energy of crystallization is about 191.9 kJ·mol-1.