METHOD FOR FORMING DOPED EXTENSION REGIONS IN A STRUCTURE HAVING SUPERIMPOSED NANOWIRES

摘要

Fabrication of a microelectronic device comprising a semiconductor structure provided with semiconductor bars positioned above one another, the method comprising the following steps:creating, on a substrate, a stacked structure comprising an alternation of first bars containing a first material and having a first critical dimension and second bars (14₂, 14₄, 14₆) containing a second material, the second material being a semiconductor, the second bars having a second critical dimension greater than the first critical dimension, then,surface doping protruding lateral portions (15) of the second bars before formation of a source and drain block on these portions.