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MULTIPLE WORK FUNCTION DEVICE USING GeOx/TiN CAP ON WORK FUNCTION SETTING METAL
MULTIPLE WORK FUNCTION DEVICE USING GeOx/TiN CAP ON WORK FUNCTION SETTING METAL
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机译:在工作功能设定金属上使用GeOx / TiN帽的多种工作功能装置
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摘要
A method is presented for tuning work functions of transistors. The method includes forming a work function stack over a semiconductor substrate, depositing a germanium oxide layer and a barrier layer over the work function stack, and annealing the germanium oxide layer to desorb oxygen therefrom to trigger oxidation of at least one conducting layer of the work function stack. The work function stack includes three layers, that is, a first layer being a TiN layer, a second layer being a titanium aluminum carbon (TiAlC) layer, and a third layer being a second TiN layer.
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