首页>
外国专利>
Spin transfer torque structure for MRAM devices having a spin current injection capping layer
Spin transfer torque structure for MRAM devices having a spin current injection capping layer
展开▼
机译:具有自旋电流注入盖层的MRAM器件的自旋传递扭矩结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
A magnetoresistive random-access memory (MRAM) device is disclosed. The device described herein has a spin current injection capping layer between the free layer of a magnetic tunnel junction and the orthogonal polarizer layer. The spin current injection capping layer maximizes the spin torque through very efficient spin current injection from the polarizer. The spin current injection capping layer can be comprised of a layer of MgO and a layer of a ferromagnetic material.
展开▼