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SOLAR CELL FABRICATION USING LASER PATTERNING OF ION-IMPLANTED ETCH-RESISTANT LAYERS AND THE RESULTING SOLAR CELLS
SOLAR CELL FABRICATION USING LASER PATTERNING OF ION-IMPLANTED ETCH-RESISTANT LAYERS AND THE RESULTING SOLAR CELLS
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机译:离子注入耐蚀层和结果太阳能电池激光刻蚀的太阳能电池制造
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摘要
Solar cell fabrication using laser patterning of ion-implanted etch-resistant layers, and the resulting solar cells, are described. In an example, a back contact solar cell includes an N-type single crystalline silicon substrate having a light-receiving surface and a back surface. Alternating continuous N-type emitter regions and segmented P-type emitter regions are disposed on the back surface of the N-type single crystalline silicon substrate, with gaps between segments of the segmented P-type emitter regions. Trenches are included in the N-type single crystalline silicon substrate between the alternating continuous N-type emitter regions and segmented P-type emitter regions and in locations of the gaps between segments of the segmented P-type emitter regions. An approximately Gaussian distribution of P-type dopants is included in the N-type single crystalline silicon substrate below the segmented P-type emitter regions. A maximum concentration of the approximately Gaussian distribution of P-type dopants is approximately in the center of each of the segmented P-type emitter regions between first and second sides of each of the segmented P-type emitter regions. Substantially vertical P/N junctions are included in the N-type single crystalline silicon substrate at the trenches formed in locations of the gaps between segments of the segmented P-type emitter regions.
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