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METHOD FOR LIMITING GROWTH OF KDP-TYPE CRYSTALS WITH A LONG SEED

机译:限制长种子KDP型晶体生长的方法

摘要

Method for limiting growth of KDP-type crystals with a long seed where an upper and a lower ends of the long seed crystal are respectively limited by an upper baffle plate and a lower tray to restrain growth of a pyramidal surface and allow only four prismatic surfaces in [100] and [010] directions to grow. Finally grown crystal contains no pyramid-prism interface that severely restricts quality of optical element, and all cut optical elements have high optical quality. As four prismatic surfaces are subjected to highly similar growing environment and grow simultaneously, all optical elements cut therefrom have high optical uniformity. Due to uniqueness of a cutting angle of a KDP crystal frequency-tripled element, high cutting efficiency is achieved in the element, and an area of a maximum frequency-tripled element that may be cut is known in advance according to a horizontal size of the grown crystal.
机译:用长晶种限制KDP型晶体生长的方法,其中长晶种的上端和下端分别由上挡板和下托盘限制,以限制锥体表面的生长并仅允许四个棱柱表面向[100]和[010]方向发展。最终生长的晶体不包含严重限制光学元件质量的金字塔棱镜界面,并且所有切割的光学元件都具有较高的光学质量。当四个棱柱表面经受高度相似的生长环境并同时生长时,从其切割的所有光学元件都具有高度的光学均匀性。由于KDP晶体三倍频元件的切割角度的独特性,在该元件中实现了高切割效率,并且根据其水平尺寸预先知道可以切割的最大三倍频元件的面积。生长的晶体。

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