首页>
外国专利>
Fabricating fin-based split-gate high-drain-voltage transistor by work function tuning
Fabricating fin-based split-gate high-drain-voltage transistor by work function tuning
展开▼
机译:通过功函数调整制造鳍片式分栅高漏电压晶体管
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method is presented for creating an asymmetrical split-gate structure. The method includes forming a first device, forming a second device, forming a first gate stack between a first set of spacers of the first device, and a second gate stack between a second set of spacers of the second device. The method further includes depositing a hard mask over the first and second gate stacks, etching a first section of the first gate stack to create a first gap and a second section of the second gate stack to create a second gap, and forming a third gate stack within the first gap of the first gate stack and within the second gap of the second gate stack such that dual gate stacks are defined for each of the first and second devices. The method further includes annealing the dual gate stacks to form replacement metal gate stacks.
展开▼