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MEMORY CELL INCLUDING MULTI-LEVEL SENSING
MEMORY CELL INCLUDING MULTI-LEVEL SENSING
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机译:包含多层次感测的记忆细胞
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摘要
An embodiment of a semiconductor apparatus may include technology to convert an analog voltage level of a memory cell of a multi-level memory to a multi-bit digital value, and determine a single-bit value of the memory cell based on the multi-bit digital value. Some embodiments may also include technology to track a temporal history of accesses to the memory cell for a duration in excess of ten seconds, and determine the single-bit value of the memory cell based on the multi-bit digital value and the temporal history. Other embodiments are disclosed and claimed.
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