Method for producing multi-layered metallization, multi-layered metallization and application of multi-layered metallization

摘要

the subject of the invention is a way to produce multilayer metallisation.in which półizolacyjne or semiconductor substrate (1) with an active layer (2) with a layer of insulation by semiconductor (3) and with the previously generated an active metal layer (4) is firstantydyfuzyjną layer (5) by magnetronowego cathode sputtering stałoprądowego dcthen naparowuje are layer based on copper (6) by working in conditions of high vacuum electron or by spraying magnetronowego,then a second layer antydyfuzyjną (7) method magnetronowego cathode sputtering stałoprądowego dc and nicr alloy layer (8), after basking in an inert atmosphere.at 400°c - 450°c by 10 - 30 minutes.the subject of the invention is also metalizacja multi-layer.in which, półizolacyjnym or semiconductor substrate (1) with an active layer (2) with a layer of insulation by semiconductor (3) and with the previously generated an active metal layer (4) is imposed.lice antydyfuzyjna layer (5), and a layer (5) is positioned antydyfuzyjnej layer based on copper (6),on which is placed the second layer antydyfuzyjna (7) imposed on her nicr alloy layer (8).the subject of the invention is also applicable to multi-layer metal produced invention semiconductor high power.