PROCESS FOR PASSIVATION OF SEMICONDUCTOR SURFACES OF COMPOUNDS FROM GROUPS III-V, TO OBTAIN A GACL-SBS/GASB-TYPE SENSITIVE STRUCTURE

摘要

The invention relates to a process for passivation of semiconductor surfaces made of compounds of groups III-V with sulphur compounds, applicable to Schottky devices for evaluation of microbial activity. According to the invention, the method consists in that a semiconductor of the type GaSb or GaAs is introduced into a solution of aliphatic thiol dissolved in ethyl alcohol or in a solution of chlorine sulphide dissolved in carbon tetrachloride, at the ambient temperature, to result in a semiconductor surface with reduced surface state density compatible with subsequent technological processing.