SWIR PHOTOSENSITIVE STRUCTURE, BASED ON GERMANIUM-TIN ALLOY NANOCRYSTALS AND PROCESS FOR MANUFACTURING THE SAME

摘要

The invention relates to a structure based on GeSn nanocrystals embedded in SiOmatrix for photodetection in short-wave infrared range SWIR, namely ITO/NC GeSn in SiO/Si substrate/Al. The active layer is formed of GeSn nanocrystals embedded in SiO, and the electrodes are arranged in a sandwich structure, an ITO transparent electrode being on the face of the structure. According to the invention, the structure based on GeSn nanocrystals embedded in SiOmatrix is made by Ge, Sn and SiOco-deposition on Si substrate by magnetron sputtering, followed by a quick thermal treatment for nanocrystallization of GeSn in the active layer, over which the ITO transparent electrode is deposited by MS, and finally the Al electrode is deposited by thermal evaporation in vacuum on the back of the silicon wafer, the structure acquiring photodetection properties in SWIR 1.3 ... 2.4 μ m.