PROCESS FOR TREATMENT WITH A BEAM OF IONS IN ORDER TO PRODUCE A SCRATCH-RESISTANT HIGH-TRANSMITTANCE ANTIREFLECTIVE SAPPHIRE

摘要

PROCESS FOR TREATMENT WITH A BEAM OF IONS IN ORDER TO PRODUCE A SCRATCH-RESISTANT HIGH-TRANSMITTANCE ANTIREFLECTIVE SAPPHIRE Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: - the voltage for acceleration of the ions is between 10 kV and 100 kV; - the implanted dose, expressed in ions/cm 2, is between (5 x 10 16 ) x (M/14) -1/2 and 10 17 x (M/14) -1/2 , where M is the atomic mass of the ion; - the rate of displacement V D, expressed in cm/s, is between 0.025 x (P/D) and 0.1 x (P/D), where P is the power of the beam, expressed in W (watts), and D is the diameter of the beam, expressed in cm (centimetres). A part made of sapphire having a high transmittance and which is resistant to scratching is thus advantageously obtained. [Figure 1]