COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (MOS) (CMOS) STANDARD CELL CIRCUITS EMPLOYING METAL LINES IN A FIRST METAL LAYER USED FOR ROUTING, AND RELATED METHODS

摘要

Title: COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (MOS) (CMOS) STANDARD CELL CIRCUITS EM- PLOYING METAL LINES IN A FIRST METAL LAYER USED FOR ROUTING, AND RELATED METHODS (57) : Complementary metal oxide semiconductor (MOS) (CMOS) standard cell circuits employing metal lines in a first metal layer used for routing, and related methods are disclosed. In one aspect, a CMOS standard cell circuit includes first supply rail, second supply rail, and metal lines disposed in the first metal layer. One or more of the metal lines are dynamically cut corresponding to a first cell boundary and a second cell boundary of the CMOS standard cell such that the metal lines have cut edges corresponding to the first and second cell boundaries. Metal lines not cut corresponding to the first and second cell boundaries can be used to interconnect nodes of the CMOS standard cell circuit. Dynamically cutting the metal lines allows the first metal layer to be used for routing, reducing routing in other metal layers such that fewer vias and metal lines are disposed above the first metal layer. LAYOUT (300) STANDARD CELL (302) 306 UC_V(2) 318(2X1) 4(1) C(8) 4(2) T(3) C(3 318(1)(1) - T(4).( UC(1) FIG. 3 W O 20 18/ 19 10 47 A2 (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 18 October 2018 (18.10.2018) WIPO I PCT o mono IIl °nolo Oil IIIII DID IIIII Ho Imo X11 ois (10) International Publication Number WO 2018/191047 A2 (51) International Patent Classification: HOlL 27/118 (2006.01) G06F 17/50 (2006.01) HOlL 27/02 (2006.01) (21) International Application Number: PCT/US2018/025648 (22) International Filing Date: 02 April 2018 (02.04.2018) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 15/487,222 13 April 2017 (13.04.2017) US (71) Applicant: QUALCOMM INCORPORATED [US/US]; ATTN: International IP Administration, 5775 Morehouse Drive, San Diego, California 92121-1714 (US). (72) Inventors: CORREALE, JR., Anthony; 5775 Morehouse Drive, San Diego, California 92121 (US). GOODALL, III, William; 5775 Morehouse Drive, San Diego, California 92121 (US). ILES, Philip, Michael; 5775 Morehouse Dri- ve, San Diego, California 92121 (US). (74) Agent: DAVENPORT, Taylor, M.; WITHROW & TER- RANOVA, PLLC, 106 Pinedale Springs Way, Cary, North Carolina 27511 (US). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). [Continued on next page] WO 2018/191047 A2 MIDIOHOMBIRDERIOMOIHMOIONHOHEHOIMIE Declarations under Rule 4.17: as to applicant's entitlement to apply for and be granted a patent (Rule 4.17(H)) as to the applicant's entitlement to claim the priority of the earlier application (Rule 4.17(iii)) Published: without international search report and to be republished upon receipt of that report (Rule 48.2(g))