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MULTI LAYER STRUCTURE WITH SPONTANEOUS EXCHANGE BIAS EFFECT

机译:具有自发交换偏置效应的多层结构

摘要

The present invention relates to a multi-layer structure with a [NiMn / Co] content (Si/Pt (tPt) /Ni45Mn55 (tAFM) /Co (tFM)/ Pt (30A) ) formulation in which the spontaneous exchange shift effect (SEB) is observed. In this invention, a multi¬ layer structure formulated with (Si/Pt (tPt) /Ni45Mn55 (tAFM) /Co (tFM) /Pt(30A)) was fabricated in which spontaneous exchange shift effect (SEB) was observed without requiring annealing and precipitation processes. The thickness of the NiMn layer and the ferromagnetic Co layer were changed, and the NiMn layer was directly grown on the intermediate layer in order to see this effect.
机译:本发明涉及具有[NiMn / Co]含量(Si / Pt(tPt)/ Ni45Mn55(tAFM)/ Co(tFM)/ Pt(30A))配方的多层结构,其中自发交换位移效应( SEB)。在本发明中,制备了由(Si / Pt(tPt)/ Ni45Mn55(tAFM)/ Co(tFM)/ Pt(30A))配制的多层结构,其中无需退火即可观察到自发交换移位效应(SEB)。和沉淀过程。改变NiMn层和铁磁Co层的厚度,并在中间层上直接生长NiMn层以观察该效果。

著录项

  • 公开/公告号WO2018226179A1

    专利类型

  • 公开/公告日2018-12-13

    原文格式PDF

  • 申请/专利权人 GEBZE TEKNIK UNIVERSITESI;

    申请/专利号WO2017TR50526

  • 发明设计人 AKBULUT AYSENUR;YILDIZ FIKRET;

    申请日2017-10-26

  • 分类号G11B5/39;

  • 国家 WO

  • 入库时间 2022-08-21 11:57:48

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