METAL SPACER-BASED APPROACHES FOR CONDUCTIVE INTERCONNECT AND VIA FABRICATION AND STRUCTURES RESULTING THEREFROM

摘要

Metal spacer-based approaches for conductive interconnect and via fabrication is described. In an example, an integrated circuit structure includes a plurality of alternating first and second conductive lines along a same direction of a back end of line (BEOL) metallization layer in an inter-layer dielectric (ILD) structure above a substrate. Each of the plurality of alternating first and second conductive lines is recessed relative to an uppermost surface of the ILD structure. The ILD structure includes a plurality of first and second ILD lines alternating with the alternating first and second conductive lines. A first hardmask component is on and aligned with the first conductive lines. A second hardmask component is on an aligned with the second conductive lines. A conductive via is in an opening in the first hardmask component and on one of the first conductive lines.