PHASE MODULATOR AND FABRICATION METHOD THEREFOR, AND SILICON-SUBSTRATE ELECTRO-OPTIC MODULATOR

摘要

A phase modulator and a fabrication method therefor, and a silicon-substrate electro-optic modulator. A P-type doped region (2) is divided by the phase modulator into a first P-type doped region (21) and a second P-type doped region (22); an N-type doped region (3) is divided into a first N-type doped region (31) and a second N-type doped region (32), wherein the doping concentration of the second P-type doped region (22) is smaller than that of the first P-type doped region (21), and the doping concentration of the second N-type doped region (32) is smaller than that of the first N-type doped region (31), thus achieving good electrical contact between the phase modulator and a driving circuit by using the heavy doping concentrations of the first P-type doped region (21) and the first N-type doped region (31), as well as reducing the doping concentration of the P-type doped region (2) at one side close to a PN junction structure (1) by using the second P-type doped region (22), reducing the doping concentration of the N-type doped region (3) at one side close to the PN junction structure (1) by using the second N-type doped region (32), and reducing the optical transmission loss of the phase modulator, thereby reducing the optical transmission loss of the silicon-substrate electro-optic modulator.