METAL OXIDE THIN FILM FORMATION APPARATUS AND METAL OXIDE THIN FILM FORMATION METHOD

摘要

The metal oxide thin film formation apparatus 1 is equipped with: a vacuum vessel 10; a treatment vessel 20 which is disposed inside the vacuum vessel 10, is capable of horizontally rotating about a central axis inclined from the horizontal direction, and has an opening 22 on one end face 21 thereof; an oxidizing gas supply device 50 which supplies an oxidizing gas into the vacuum vessel 10; an organic metal gas supply device 30 which is inserted inward from the opening 22 and supplies an organic metal gas; and a control unit 60 for executing a series of steps, namely, (1) an organic metal gas supply step, (2) a first gas discharge step, (3) an oxidizing gas supply step, and (4) a second gas discharge step, and repeating the series of steps (1) through (4) for a predetermined number of times in accordance with the film thickness of the metal oxide thin film to be formed on the surfaces of microparticles.