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ELECTRON SPECIFIC OXIDE DOUBLE LAYER CONTACTS FOR HIGHLY EFFICIENT AND UV STABLE PEROVSKITE DEVICE

机译:适用于高效和紫外线稳定钙钛矿设备的电子特定氧化物双层接触

摘要

The present invention relates to an optoelectronic device comprising an electron transport layer (ETL) and a light harvesting layer, wherein the light harvesting layer comprises a metal halide perovskite and is provided on the ETL being a multilayer structure comprising at least two layers of metal oxide, at least one layer of which comprising a crystalline mesoporous metal oxide and at least one layer of which comprising an amorphous metal oxide or metal oxide nanocrystals, and wherein the layer being in contact with the light harvesting layer comprises the amorphous metal oxide or the metal oxide nanocrystals and is provided on the layer comprising the crystalline mesoporous metal oxide.
机译:光电器件技术领域本发明涉及一种光电器件,其包括电子传输层(ETL)和光收集层,其中该光收集层包括金属卤化物钙钛矿并且被提供在该ETL上是多层结构,该多层结构包括至少两层金属氧化物,其至少一层包含结晶介孔金属氧化物,并且至少一层包含非晶态金属氧化物或金属氧化物纳米晶体,并且其中与光收集层接触的层包括非晶态金属氧化物或金属。氧化物纳米晶体,并提供在包含结晶中孔金属氧化物的层上。

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