SILICON NANOTUBE, FIELD EFFECT TRANSISTOR-BASED MEMORY CELL, MEMORY ARRAY AND METHOD OF PRODUCTION

摘要

A memory cell includes a substrate and a body including plural layers. The body has an inner body and an outer body, and the body is formed on top of the substrate. A nanotube trench is formed vertically in the body and extends to the substrate. A nanotube structure is formed in the nanotube trench. The nanotube trench divides the body into the inner body and the outer body and the nanotube structure is mechanically separated from the inner body and the outer body by a tunnel oxide layer, a charge trapping layer, and a blocking oxide layer.