A light emitting diode comprising at least one wider bandgap intermediate layer located in at least one barrier layer of a light emitting region

摘要

The light emitting diode 100 includes: first and second semiconductor layers 102 and 104 doped with n-type and p-type respectively and forming a pn junction; An In _x Ga _{1 -x} N light emitting layer 106 positioned between the first and second layers and capable of forming a quantum well, and two In _Y Ga _{1 -Y} N (0 Y X) an active region 105 comprising a barrier layer 108; An intermediate layer 114 located in a barrier layer located between the light emitting layer and the first layer and partially located on one side of the intermediate layer or between the barrier layer and the light emitting layer, the intermediate layer having a band gap larger than the band gap of the barrier layer including large III-N semiconductors; including, the second layer is GaN or _{In W Ga 1-W N,} 0 W Y included, the first layer In _V Ga _1-V N, and V of Gt; W 0.