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DISUBSTITUTED ALKYNE DICOBALT HEXACARBONYL COMPOUNDS, METHOD OF MAKING, AND METHOD OF USE THEREOF

机译:二取代的炔烃二异丁酸六氢羰基化合物,制备方法及其使用方法

摘要

The present invention relates to cobalt compounds, methods for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide, etc.), and cobalt films. Examples of cobalt precursor compounds are (disubstituted alkyne) dicobalt hexacarbonyl compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicides. The present invention relates to disubstituted alkyne ligands with alkyl groups such as linear alkyls and branched alkyls to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance.;COPYRIGHT KIPO 2019
机译:本发明涉及钴化合物,制备钴化合物的方法,用作沉积含钴膜(例如,钴,氧化钴,氮化钴,硅化钴等)的前体的钴化合物,和钴膜。钴前体化合物的实例是(二取代炔)二钴六羰基化合物。用于沉积含金属膜的表面的实例包括但不限于金属,金属氧化物,金属氮化物和金属硅化物。本发明涉及具有烷基如直链烷基和支链烷基以形成钴配合物的二取代炔烃配体,所述钴配合物用于选择性沉积在某些表面上和/或具有优异的膜性能如均匀性,连续性和低电阻性。 2019年

著录项

  • 公开/公告号KR20190072382A

    专利类型

  • 公开/公告日2019-06-25

    原文格式PDF

  • 申请/专利权人 VERSUM MATERIALS US LLC;

    申请/专利号KR20180008298

  • 申请日2018-01-23

  • 分类号C23C16/18;C07F15/06;C23C16/02;C23C16/04;C23C16/34;C23C16/40;C23C16/42;C23C16/455;C23C16/56;H01L21/28;H01L21/285;

  • 国家 KR

  • 入库时间 2022-08-21 11:50:32

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