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Disubstituted alkyne dicobalt hexacarbonyl compound, method for producing the same, and method for using the same

机译:二取代炔烃二钴二羰基六羰基化合物,其制备方法和使用方法

摘要

Described herein are cobalt compounds, processes for making cobalt compounds, cobalt compounds used as precursors for depositing cobalt-containing films (e.g., cobalt, cobalt oxide, cobalt nitride, cobalt silicide etc.); and cobalt films. Examples of cobalt precursor compounds are (disubstituted alkyne) dicobalt hexacarbonyl compounds. Examples of surfaces for deposition of metal-containing films include, but are not limited to, metals, metal oxides, metal nitrides, and metal silicides. Disubstituted alkyne ligands with alkyl groups such as linear alkyls and branched alkyls to form cobalt complexes which are used for selective deposition on certain surfaces and/or superior film properties such as uniformity, continuity, and low resistance. Co 2 (CO) 6 (R 1 CžCR 2 )
机译:本文描述的是钴化合物,制备钴化合物的方法,用作沉积含钴膜(例如钴,氧化钴,氮化钴,硅化钴等)的前体的钴化合物;等等。和钴膜。钴前体化合物的实例是(二取代炔)二钴六羰基化合物。用于沉积含金属膜的表面的实例包括但不限于金属,金属氧化物,金属氮化物和金属硅化物。具有烷基的双取代炔烃配体,例如直链烷基和支链烷基,形成钴配合物,用于在某些表面上选择性沉积和/或优异的薄膜性能,例如均匀性,连续性和低电阻。Co 2(CO)6(R 1CžCR2)

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