- - METHOD FOR MANUFACTURING ROD-LIKE CARBON-GERMANIUM COMPOSITE AND ROD-LIKE CARBON-GERMANIUM COMPOSITE

摘要

The present specification discloses a method of manufacturing a semiconductor device, comprising: preparing a reaction tank including a cathode, and a cathode having a base material receiving portion; Filling the base material receiving portion with a germanium base material; Filling the reaction tank with a raw material gas containing a carbon-containing gas; Wherein the pressure of the carbon-containing gas in the reaction tank with respect to the pressure of the raw material gas in the reaction tank is 0.01 to 0.1 , Said rod-shaped carbon-germanium composite comprising a carbon layer on the surface of a rod-shaped germanium core, and A rod-shaped carbon-germanium composite, wherein the rod-shaped carbon-germanium composite is provided with a carbon layer on the surface of the rod-shaped germanium core.