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Low-voltage high efficient charge pump for improving low efficiency by threshold voltage effect

机译:低压高效电荷泵,通过阈值电压效应改善低效率

摘要

The present invention relates to a low-voltage high efficiency charge pump circuit for improving an efficiency reduction problem caused by a threshold voltage effect. The charge pump circuit of the present invention can obtain desired boosting voltage by adding the number of a stage of a charge pump without loss due to threshold voltage, does not need a high-cost triple-well process and the like when recovering a threshold voltage problem, and can be realized in a general twin-well process by using only a p-type metal oxide semiconductor (PMOS) in which a source and a body terminal are connected. Moreover, two charge pump states having reverse phases are connected in parallel with each other to alternately perform charge-boosting operation so as to reduce ripples of output direct current (DC) voltage.
机译:低压高效电荷泵电路技术领域本发明涉及一种低压高效电荷泵电路,用于改善由阈值电压效应引起的效率降低问题。本发明的电荷泵电路可以通过增加电荷泵的级数而获得期望的升压电压,而不会由于阈值电压而造成损失,并且在恢复阈值电压时不需要高成本的三阱工艺等。问题,并且可以通过仅使用其中连接了源极和体端子的p型金属氧化物半导体(PMOS)以常规的双阱工艺实现。此外,具有反相的两个电荷泵状态彼此并联连接以交替地执行升压操作,从而减小输出直流(DC)电压的波动。

著录项

  • 公开/公告号KR101983386B1

    专利类型

  • 公开/公告日2019-06-07

    原文格式PDF

  • 申请/专利权人 HIVICS;

    申请/专利号KR20170181581

  • 发明设计人 LEE BONG JOON;CHUNG SUNG GYU;PU YOUNG GUN;

    申请日2017-12-27

  • 分类号H02M3/07;

  • 国家 KR

  • 入库时间 2022-08-21 11:48:31

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