Gas Distribution Showerhead For Inductively Coupled Plasma Etch Reactor

摘要

The present invention is directed to an inductively coupled plasma processing apparatus comprising a processing chamber in which a semiconductor substrate is processed, a substrate support on which a semiconductor substrate is supported during its processing, and an antenna operable to generate and maintain a plasma in the processing chamber. Describe the shower head. The ceramic showerhead forms a dielectric window of the chamber and the gas delivery system alternately supplies the etching gas and the deposition gas to the plenum in the showerhead and operates to replace the etching gas in the plenum with the deposition gas within 200 milliseconds It is possible.