LTPS SHORT PULSE FIBER LASER FOR LTPS CRYSTALLIZATION

摘要

Laser pulses from pulsed fiber lasers are assigned to an amorphous silicon layer to produce a polysilicon layer containing a disordered arrangement of crystalline regions by repeating melting and recrystallization. At a repetition rate of 10 kHz to 10 MHz, a laser pulse period of about 0.5 to 5 ns in the wavelength range between about 500 nm and 1000 nm can be used. The intensity uniformity of the line beam is varied by varying the four-stage delay of the other part of the beam formed by Raman scattering or laser pulses in the multimode fiber to reduce the beam interference, thereby broadening the laser pulse spectrally Can be improved.