首页> 外国专利> - - -LED Fabricating methods of quantum dots-oxide composite and on-chip package quantum dots-LED using the same

- - -LED Fabricating methods of quantum dots-oxide composite and on-chip package quantum dots-LED using the same

机译:---LED的量子点-氧化物复合材料的制造方法以及使用该方法的芯片封装量子点-LED

摘要

A method of manufacturing a quantum dot-oxide composite in which fluorescence stability under deteriorated conditions is improved without reducing the quantum efficiency (QY), and an on-chip package quantum dot-LED manufacturing method using the same are provided. The method for producing a quantum dot-oxide composite according to the present invention comprises the steps of: preparing a quantum dot dispersion in which quantum dots are dispersed in a solvent; Adding an oxide precursor to the quantum dot dispersion to prepare a mixed solution; And placing the mixed solution in a thermo-hygrostat without adding a catalyst or water to the mixed solution to surround the quantum dots with an oxide derived from the oxide precursor.
机译:提供了一种在不降低量子效率(QY)的情况下改善了在劣化条件下的荧光稳定性的量子点氧化物复合材料的制造方法,以及使用该方法的芯片上封装量子点LED的制造方法。本发明的量子点氧化物复合体的制造方法包括以下步骤:制备量子点分散体,其中量子点分散在溶剂中;向量子点分散液中添加氧化物前驱体以制备混合溶液;并且将混合溶液放置在恒温恒湿器中而不向混合溶液中添加催化剂或水以用源自氧化物前体的氧化物包围量子点。

著录项

  • 公开/公告号KR102006075B1

    专利类型

  • 公开/公告日2019-07-31

    原文格式PDF

  • 申请/专利权人 홍익대학교 산학협력단;

    申请/专利号KR20170157429

  • 发明设计人 양희선;장은표;

    申请日2017-11-23

  • 分类号C09K11;C09K11/02;

  • 国家 KR

  • 入库时间 2022-08-21 11:48:02

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