Power chip integrated module its manufacturing method and power module package of double-faced cooling

摘要

The present invention relates to a power chip integrated module, a manufacturing method thereof, and a double-sided cooling type power module package, including: a first semiconductor chip; A second semiconductor chip; A wiring layer formed on an upper surface or a lower surface of the first semiconductor chip and the second semiconductor chip to electrically connect the first semiconductor chip and the second semiconductor chip; Formed on an installation surface of the first semiconductor chip and the second semiconductor chip from internal electrode pads formed on at least one of the wiring layer, the first semiconductor chip, the second semiconductor chip, and combinations thereof; An internal electrode formed to extend to an external solder pad; And a first molding member formed to surround at least a portion of the first semiconductor chip, the second semiconductor chip, and the internal electrode.