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CMOS Frequency mixer using low-power CMOScomplementary metal oxide semiconductor

机译:使用低功率CMOS互补金属氧化物半导体的CMOS混频器

摘要

A frequency mixer using a low power CMOS is disclosed. A frequency mixer using a low power CMOS includes a plurality of CMOS transistors and a transconductor stage including a plurality of CMOS transistors constituted by a pair of NMOS transistors and PMOS transistors. A first switching stage connected to a first source terminal and a power source of some CMOS transistors of the CMOS transistors, and a second switching stage connected to a second source terminal and ground of the remaining CMOS transistors of the plurality of CMOS transistors; It includes, but the RF signal is input to the gate terminal of the plurality of CMOS transistors, the IF signal is output from the drain terminal of the plurality of CMOS transistors.
机译:公开了一种使用低功率CMOS的混频器。使用低功率CMOS的混频器包括多个CMOS晶体管和跨导级,该跨导级包括由一对NMOS晶体管和PMOS晶体管构成的多个CMOS晶体管。第一开关级连接到该CMOS晶体管的一些CMOS晶体管的第一源极端子和电源,第二开关级连接到第二源极端子和多个CMOS晶体管中其余的CMOS晶体管的地。它包括,但是RF信号被输入到多个CMOS晶体管的栅极端子,IF信号从多个CMOS晶体管的漏极端子输出。

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