- CONFORMAL TRANSFER DOPING METHOD FOR FIN-LIKE FIELD EFFECT TRANSISTOR

摘要

Doping techniques for pin-type field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a fin structure, forming a doped amorphous layer over a portion of the fin structure, and inducing a dopant from the doped amorphous layer into the portion of the fin structure, thereby forming doped features. To implement a knock-on injection process. The doped amorphous layer comprises a material in an amorphous form. In some embodiments, the knock-on implantation process comprises at least a portion of the doped amorphous layer, wherein the portion of the doped amorphous layer is a portion of the fin structure. Crystallize as much as possible. In some embodiments, the doped amorphous layer comprises amorphous silicon, and the knock-on implantation process crystallizes a portion of the doped amorphous silicon layer.