Method and device for depositing an epitaxial layer of silicon on a semiconductor wafer of monocrystalline silicon by vapor deposition in a process chamber

摘要

A method of depositing a layer on a semiconductor wafer by vapor deposition in a process chamber having upper and lower lids, comprising measuring the temperature on the front side of the semiconductor wafer; heating the semiconductor wafer to a deposition temperature; controlling the temperature of the upper lid of the process chamber to a target temperature, wherein the temperature of the upper lid is measured in the center of the outer surface of the upper lid and used as the actual value of the controlled variable of a control loop for controlling the temperature of the upper lid; adjusting a gas flow with which a process gas is passed to deposit the layer through the process chamber; and depositing the layer on the front side of the semiconductor wafer heated to the deposition temperature during the regulation of the temperature of the upper lid of the process chamber to the target temperature, characterized in that an epitaxial layer of silicon is deposited on a semiconductor wafer of monocrystalline silicon and the target temperature in one Range from 510 ° C to 530 ° C is selected, if the set gas flow of the process gas is in the range of 45 slm to 55 slm that the target temperature is selected in a range of 525 ° C to 545 ° C, if the set Gas flow of the process gas is in the range of 56 slm to 65 slm, and that the target temperature is selected in a range of 540 ° C to 560 ° C lying when the set gas flow of the process gas in the range of 66 slm to 80 slm.