SEMICONDUCTOR LASER, OPERATING METHOD FOR A SEMICONDUCTOR LASER AND METHOD FOR DETERMINING THE OPTIMUM FILLING FACTOR OF A SEMICONDUCTOR LASER

摘要

In one embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) based on the material system AlInGaN with at least one active zone (22) for generating a laser radiation. A heat sink (3) is thermally connected to the semiconductor layer sequence (2) and has a thermal resistance to the semiconductor layer sequence (2). The semiconductor layer sequence (2) is subdivided into a plurality of emitter strips (4) and each emitter strip (4) has a width (b) of at most 0.3 mm in the direction perpendicular to a beam direction (R). The emitter strips (4) are arranged with a filling factor (FF) of less than or equal to 0.4. The fill factor (FF) is set so that laser radiation with a maximum optical output power (P) can be generated during operation.